IRG7RC07SD Todos los transistores

 

IRG7RC07SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG7RC07SD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 39 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 10 nS
   Coesⓘ - Capacitancia de salida, typ: 22 pF
   Qgⓘ - Carga total de la puerta, typ: 13 nC
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de IRG7RC07SD IGBT

   - Selección ⓘ de transistores por parámetros

 

IRG7RC07SD Datasheet (PDF)

 ..1. Size:300K  international rectifier
 irg7rc07sd.pdf pdf_icon

IRG7RC07SD

PD - 96425IRG7RC07SDPbFOptimized for line frequency, 50/60Hz switching frequencyFeaturesC Standard speed IGBT for switchingfrequency less than 1KHzVCES = 600V Very low VCE (ON) Ultra fast soft recovery diodeIC = 8.5A, TC = 100CGVCE(on) typ. =1.2V@IC = 3ABenefitsE High efficiency for line frequency applicationsn-channel Higher reliability from r

 8.1. Size:342K  international rectifier
 irg7rc10fd.pdf pdf_icon

IRG7RC07SD

PD - 97759IRG7RC10FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 9.0A, TC = 100CFeatures Low VCE(on)tsc > 3s, Tjmax = 150CG Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityVCE(on) typ. = 1.6VE Ultra Fast Soft Recovery Co-pak Diode@ IC = 5A Square RBSOAn-channelBenefits Ben

 9.1. Size:237K  international rectifier
 irg7r313u.pdf pdf_icon

IRG7RC07SD

PD - 97484IRG7R313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead

Otros transistores... IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 , FGPF4533 , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E .

History: IQIB100N60D3 | SKM200GAH123DKL | IKW50N65WR5 | MIO1200-25E10 | MG06150S-BN4MM

 

 
Back to Top

 


 
.