IRG7RC07SD Specs and Replacement
Type Designator: IRG7RC07SD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 39 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 16 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
tr ⓘ - Rise Time, typ: 10 nS
Coesⓘ - Output Capacitance, typ: 22 pF
Package: TO252
IRG7RC07SD Substitution - IGBT ⓘ Cross-Reference Search
IRG7RC07SD datasheet
irg7rc07sd.pdf
PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features C Standard speed IGBT for switching frequency less than 1KHz VCES = 600V Very low VCE (ON) Ultra fast soft recovery diode IC = 8.5A, TC = 100 C G VCE(on) typ. =1.2V@IC = 3A Benefits E High efficiency for line frequency applications n-channel Higher reliability from r... See More ⇒
irg7rc10fd.pdf
PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 9.0A, TC = 100 C Features Low VCE(on) tsc > 3 s, Tjmax = 150 C G Zero VCE(on) temperature coefficient 3 s Short Circuit Capability VCE(on) typ. = 1.6V E Ultra Fast Soft Recovery Co-pak Diode @ IC = 5A Square RBSOA n-channel Benefits Ben... See More ⇒
irg7r313u.pdf
PD - 97484 IRG7R313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead ... See More ⇒
Specs: IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 , KGF75N65KDF , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E .
Keywords - IRG7RC07SD transistor spec
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