T0800EB45G Todos los transistores

 

T0800EB45G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: T0800EB45G
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 6400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 4500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.75 V @25℃
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 3300 nS
   Paquete / Cubierta: MODULE
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T0800EB45G Datasheet (PDF)

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T0800EB45G

Date:- 3 March, 2012 Data Sheet Issue: - 1 WESTCODEAn IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) D

 9.1. Size:513K  ixys
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T0800EB45G

Date:- 14 July, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IGP30N65F5 | DGW60N65BTH | IGC109T120T6RH | IGP30N60T | DIM1500ASM33-TS001 | DG75X07T2L | DG50X07T2

 

 
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