All IGBT. T0800EB45G Datasheet

 

T0800EB45G Datasheet and Replacement


   Type Designator: T0800EB45G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 6400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 800 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2(typ) V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 3300 nS
   Qgⓘ - Total Gate Charge, typ: 5000 nC
   Package: MODULE
      - IGBT Cross-Reference

 

T0800EB45G Datasheet (PDF)

 ..1. Size:382K  ixys
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T0800EB45G

Date:- 3 March, 2012 Data Sheet Issue: - 1 WESTCODEAn IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) D

 9.1. Size:513K  ixys
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T0800EB45G

Date:- 14 July, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Datasheet: AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , GT30J124 , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E .

History: IGC99T120T6RH | DGP10N60CTL

Keywords - T0800EB45G transistor datasheet

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