T1200EB45E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: T1200EB45E
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 12500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 4500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 3000 nS
Paquete / Cubierta: MODULE
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T1200EB45E Datasheet (PDF)
t1200eb45e.pdf
Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) Continuous DC
ixa20pt1200lb.pdf
IXA20PT1200LBtentativeVCES = 2x 1200VXPT IGBTI= 28 AC25VCE(sat) = 1.8VISOPLUSSurface Mount Power DevicePhase leg SCR / IGBTPart numberIXA20PT1200LBBackside: isolated9E32664113276458Features / Advantages: Applications: Package: SMPD XPT IGBT Phaseleg Isolation Voltage: V~3000 - low saturation voltage - buck-boost chopper Indus
t1200tb25a.pdf
Date:- 12 Jan, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
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