T1200EB45E - аналоги, параметры транзистора - Справочник транзисторов

T1200EB45E даташит

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Date - 19 Oct, 2009 Data Sheet Issue - 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) Continuous DC

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IXA20PT1200LB tentative VCES = 2x 1200V XPT IGBT I= 28 A C25 VCE(sat) = 1.8V ISOPLUS Surface Mount Power Device Phase leg SCR / IGBT Part number IXA20PT1200LB Backside isolated 9 E326641 1 3 2 7 6 4 5 8 Features / Advantages Applications Package SMPD XPT IGBT Phaseleg Isolation Voltage V 3000 - low saturation voltage - buck-boost chopper Indus

9.2. Size:429K ixys
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Date - 12 Jan, 2011 Data Sheet Issue - P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Другие IGBT... T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , FGD4536 , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS .