T1200EB45E Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

T1200EB45E Datasheet (PDF)

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Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) Continuous DC

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IXA20PT1200LBtentativeVCES = 2x 1200VXPT IGBTI= 28 AC25VCE(sat) = 1.8VISOPLUSSurface Mount Power DevicePhase leg SCR / IGBTPart numberIXA20PT1200LBBackside: isolated9E32664113276458Features / Advantages: Applications: Package: SMPD XPT IGBT Phaseleg Isolation Voltage: V~3000 - low saturation voltage - buck-boost chopper Indus

9.2. Size:429K ixys
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Date:- 12 Jan, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Datasheet: T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , RJP30H2A , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS .