AP28G40GEO - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP28G40GEO
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.2 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 800 nS
Coesⓘ - Capacitancia de salida, typ: 44 pF
Qgⓘ - Carga total de la puerta, typ: 76 nC
Paquete / Cubierta: TSSOP8
- Selección de transistores por parámetros
AP28G40GEO Datasheet (PDF)
ap28g40geo.pdf
AP28G40GEORoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VC High Peak Current Capability ICP 150ACCC Low Gate Drive Strobe Flash Applications CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E
ap28g40gem-hf.pdf
AP28G40GEM-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VCC High Peak Current Capability C ICP 150AC Low Gate DriveG Strobe Flash Applications CEEGE RoHS Compliant & Halogen-Free SO-8EAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter V
ap28g45gem.pdf
AP28G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 130A CC 3.3V Gate DriveCCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating
ap28g45geo-hf.pdf
AP28G45GEO-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150AEEG Low Gate Drive Strobe Flash Applications CCCCTSSOP-8GCEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPeak Gate-
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXXH150N60C3 | IRGIB15B60KD1P | SKM50GB12V | HCKW75N65BH2
History: IXXH150N60C3 | IRGIB15B60KD1P | SKM50GB12V | HCKW75N65BH2
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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