AP28G40GEO Todos los transistores

 

AP28G40GEO IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP28G40GEO

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1 W

|Vce|ⓘ - Tensión máxima colector-emisor: 400 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5.2 V @25℃

trⓘ - Tiempo de subida, typ: 800 nS

Coesⓘ - Capacitancia de salida, typ: 44 pF

Encapsulados: TSSOP8

 Búsqueda de reemplazo de AP28G40GEO IGBT

- Selección ⓘ de transistores por parámetros

 

AP28G40GEO datasheet

 ..1. Size:94K  ape
ap28g40geo.pdf pdf_icon

AP28G40GEO

AP28G40GEO RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V C High Peak Current Capability ICP 150A C C C Low Gate Drive Strobe Flash Applications C G E E TSSOP-8 G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-E

 5.1. Size:56K  ape
ap28g40gem-hf.pdf pdf_icon

AP28G40GEO

AP28G40GEM-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V C C High Peak Current Capability C ICP 150A C Low Gate Drive G Strobe Flash Applications C E E G E RoHS Compliant & Halogen-Free SO-8 E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter V

 8.1. Size:70K  ape
ap28g45gem.pdf pdf_icon

AP28G40GEO

AP28G45GEM Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 130A C C 3.3V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating

 8.2. Size:93K  ape
ap28g45geo-hf.pdf pdf_icon

AP28G40GEO

AP28G45GEO-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150A E E G Low Gate Drive Strobe Flash Applications C C C C TSSOP-8 G C E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGE Peak Gate-

Otros transistores... T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , SGT50T65FD1PT , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 .

History: RJP4010AGE

 

 

 


History: RJP4010AGE

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

mp1620 | kta1381 | bf494 | 2sc1885 | skd502t | 2sb754 | 2sc2362 | 2sd468

 

 

↑ Back to Top
.