All IGBT. AP28G40GEO Datasheet

 

AP28G40GEO Datasheet and Replacement


   Type Designator: AP28G40GEO
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 800 nS
   Coesⓘ - Output Capacitance, typ: 44 pF
   Qgⓘ - Total Gate Charge, typ: 76 nC
   Package: TSSOP8
      - IGBT Cross-Reference

 

AP28G40GEO Datasheet (PDF)

 ..1. Size:94K  ape
 ap28g40geo.pdf pdf_icon

AP28G40GEO

AP28G40GEORoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VC High Peak Current Capability ICP 150ACCC Low Gate Drive Strobe Flash Applications CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

 5.1. Size:56K  ape
 ap28g40gem-hf.pdf pdf_icon

AP28G40GEO

AP28G40GEM-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VCC High Peak Current Capability C ICP 150AC Low Gate DriveG Strobe Flash Applications CEEGE RoHS Compliant & Halogen-Free SO-8EAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter V

 8.1. Size:70K  ape
 ap28g45gem.pdf pdf_icon

AP28G40GEO

AP28G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 130A CC 3.3V Gate DriveCCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating

 8.2. Size:93K  ape
 ap28g45geo-hf.pdf pdf_icon

AP28G40GEO

AP28G45GEO-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150AEEG Low Gate Drive Strobe Flash Applications CCCCTSSOP-8GCEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPeak Gate-

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History: MMG300D120B6TC

Keywords - AP28G40GEO transistor datasheet

 AP28G40GEO cross reference
 AP28G40GEO equivalent finder
 AP28G40GEO lookup
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