AP28G40GEO PDF and Equivalents Search

 

AP28G40GEO Specs and Replacement

Type Designator: AP28G40GEO

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.2 V @25℃

tr ⓘ - Rise Time, typ: 800 nS

Coesⓘ - Output Capacitance, typ: 44 pF

Package: TSSOP8

 AP28G40GEO Substitution

- IGBT ⓘ Cross-Reference Search

 

AP28G40GEO datasheet

 ..1. Size:94K  ape
ap28g40geo.pdf pdf_icon

AP28G40GEO

AP28G40GEO RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V C High Peak Current Capability ICP 150A C C C Low Gate Drive Strobe Flash Applications C G E E TSSOP-8 G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-E... See More ⇒

 5.1. Size:56K  ape
ap28g40gem-hf.pdf pdf_icon

AP28G40GEO

AP28G40GEM-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V C C High Peak Current Capability C ICP 150A C Low Gate Drive G Strobe Flash Applications C E E G E RoHS Compliant & Halogen-Free SO-8 E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter V... See More ⇒

 8.1. Size:70K  ape
ap28g45gem.pdf pdf_icon

AP28G40GEO

AP28G45GEM Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 130A C C 3.3V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating ... See More ⇒

 8.2. Size:93K  ape
ap28g45geo-hf.pdf pdf_icon

AP28G40GEO

AP28G45GEO-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150A E E G Low Gate Drive Strobe Flash Applications C C C C TSSOP-8 G C E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGE Peak Gate-... See More ⇒

Specs: T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , SGT50T65FD1PT , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 .

Keywords - AP28G40GEO transistor spec

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