HGT1Y40N60A4D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT1Y40N60A4D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Paquete / Cubierta: TO264
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HGT1Y40N60A4D Datasheet (PDF)
hgt5a40n60a4d hgt1y40n60a4d.pdf
HGT5A40N60A4D / HGT1Y40N60A4DData Sheet May 2002600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40AThe HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20Agated high voltage switching devices combining the best 600V Switching SOA Capabilityfeatures of a MOSFET and a bipolar transistor. These de
Otros transistores... HGT1S7N60B3 , HGT1S7N60B3D , HGT1S7N60B3DS , HGT1S7N60B3S , HGT1S7N60C3D , HGT1S7N60C3DS , HGT1S7N60C3DS9A , HGT5A40N60A4D , GT30G124 , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS .
History: DIM800FSM17-A | IQGB150N120GB4 | IXYN100N65A3
History: DIM800FSM17-A | IQGB150N120GB4 | IXYN100N65A3
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