All IGBT. HGT1Y40N60A4D Datasheet

 

HGT1Y40N60A4D Datasheet and Replacement


   Type Designator: HGT1Y40N60A4D
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40N60A4D
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Qgⓘ - Total Gate Charge, typ: 350 nC
   Package: TO264
      - IGBT Cross-Reference

 

HGT1Y40N60A4D Datasheet (PDF)

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HGT1Y40N60A4D

HGT5A40N60A4D / HGT1Y40N60A4DData Sheet May 2002600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40AThe HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20Agated high voltage switching devices combining the best 600V Switching SOA Capabilityfeatures of a MOSFET and a bipolar transistor. These de

Datasheet: HGT1S7N60B3 , HGT1S7N60B3D , HGT1S7N60B3DS , HGT1S7N60B3S , HGT1S7N60C3D , HGT1S7N60C3DS , HGT1S7N60C3DS9A , HGT5A40N60A4D , IRG7IC28U , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS .

History: IXBF22N300 | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | APTGT600U170D4 | IKW50N65WR5 | TT050K065FQ

Keywords - HGT1Y40N60A4D transistor datasheet

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