HGT1Y40N60A4D Datasheet. Specs and Replacement

Type Designator: HGT1Y40N60A4D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Package: TO264

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HGT1Y40N60A4D datasheet

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HGT1Y40N60A4D

HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40A The HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20A gated high voltage switching devices combining the best 600V Switching SOA Capability features of a MOSFET and a bipolar transistor. These de... See More ⇒

Specs: HGT1S7N60B3, HGT1S7N60B3D, HGT1S7N60B3DS, HGT1S7N60B3S, HGT1S7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3DS9A, HGT5A40N60A4D, SGT50T65FD1PN, HGT5A40N60A4, HGTD10N40F1, HGTD10N40F1S, HGTD10N40F1S9A, HGTD10N50F1, HGTD10N50F1S, HGTD10N50F1S9A, HGTD1N120BNS

Keywords - HGT1Y40N60A4D transistor spec

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