RJP4301APP-M0 Todos los transistores

 

RJP4301APP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJP4301APP-M0
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 30 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 430 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 33 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 240 nS
   Coesⓘ - Capacitancia de salida, typ: 125 pF
   Paquete / Cubierta: TO220FL
     - Selección de transistores por parámetros

 

RJP4301APP-M0 Datasheet (PDF)

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RJP4301APP-M0

Preliminary Datasheet RJP4301APP-M0 R07DS0749EJ0100Rev.1.00Nch IGBT for Strobe Flash Apr 26, 2012Features VCES : 430 V TO-220FL package High Speed Switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)21 : Gate2 : Collector13 : Emitter1233Applications Strobe flash Maximum Ratings (Tc = 25C) Parameter Symbo

 3.1. Size:198K  renesas
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RJP4301APP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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History: MDI145-12A3 | HGT1S7N60B3DS | OST60N65HSZF | GT25G102 | VS-ETF075Y60U | IRGP4069DPBF | MMG150CE065PD6TC

 

 
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