All IGBT. RJP4301APP-M0 Datasheet

 

RJP4301APP-M0 IGBT. Datasheet pdf. Equivalent

Type Designator: RJP4301APP-M0

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 30

Maximum Collector-Emitter Voltage |Vce|, V: 430

Collector-Emitter saturation Voltage |Vcesat|, V: 4

Maximum Gate-Emitter Voltage |Veg|, V: 33

Maximum Collector Current |Ic|, A: 200

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 240

Maximum Collector Capacity (Cc), pF: 125

Package: TO220FL

RJP4301APP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJP4301APP-M0 Datasheet (PDF)

1.1. rjp4301app-m0.pdf Size:56K _igbt

RJP4301APP-M0
RJP4301APP-M0

 Preliminary Datasheet RJP4301APP-M0 R07DS0749EJ0100 Rev.1.00 Nch IGBT for Strobe Flash Apr 26, 2012 Features  VCES : 430 V  TO-220FL package  High Speed Switching Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1 : Gate 2 : Collector 1 3 : Emitter 1 2 3 3 Applications Strobe flash Maximum Ratings (Tc = 25°C) Parameter Symbo

1.2. rjp4301app-00.pdf Size:198K _igbt

RJP4301APP-M0
RJP4301APP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 

Datasheet: AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , IRG4PC40W , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 .

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