RJP4301APP-M0 PDF and Equivalents Search

 

RJP4301APP-M0 Specs and Replacement

Type Designator: RJP4301APP-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 33 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃

tr ⓘ - Rise Time, typ: 240 nS

Coesⓘ - Output Capacitance, typ: 125 pF

Package: TO220FL

 RJP4301APP-M0 Substitution

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RJP4301APP-M0 datasheet

 ..1. Size:56K  renesas
 rjp4301app-m0.pdf pdf_icon

RJP4301APP-M0

Preliminary Datasheet RJP4301APP-M0 R07DS0749EJ0100 Rev.1.00 Nch IGBT for Strobe Flash Apr 26, 2012 Features VCES 430 V TO-220FL package High Speed Switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) 2 1 Gate 2 Collector 1 3 Emitter 1 2 3 3 Applications Strobe flash Maximum Ratings (Tc = 25 C) Parameter Symbo... See More ⇒

 3.1. Size:198K  renesas
 rjp4301app-00.pdf pdf_icon

RJP4301APP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Specs: AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , BT40T60ANF , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 .

Keywords - RJP4301APP-M0 transistor spec

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