RJP4301APP-M0 Datasheet and Replacement
Type Designator: RJP4301APP-M0
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 33 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 240 nS
Coesⓘ - Output Capacitance, typ: 125 pF
Package: TO220FL
- IGBT Cross-Reference
RJP4301APP-M0 Datasheet (PDF)
rjp4301app-m0.pdf

Preliminary Datasheet RJP4301APP-M0 R07DS0749EJ0100Rev.1.00Nch IGBT for Strobe Flash Apr 26, 2012Features VCES : 430 V TO-220FL package High Speed Switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)21 : Gate2 : Collector13 : Emitter1233Applications Strobe flash Maximum Ratings (Tc = 25C) Parameter Symbo
rjp4301app-00.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP63F3DPP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - RJP4301APP-M0 transistor datasheet
RJP4301APP-M0 cross reference
RJP4301APP-M0 equivalent finder
RJP4301APP-M0 lookup
RJP4301APP-M0 substitution
RJP4301APP-M0 replacement
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50



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