RJH60A83RDPP-M0 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJH60A83RDPP-M0 datasheet

0.1. Size:119K renesas
rjh60a83rdpp-m0.pdf pdf_icon

Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130

3.1. Size:110K renesas
rjh60a83rdpe.pdf pdf_icon

Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130 ns

7.1. Size:111K renesas
rjh60a85rdpe.pdf pdf_icon

Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160 ns

7.2. Size:120K renesas
rjh60a85rdpp-m0.pdf pdf_icon

Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160

Otros transistores... AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , SGT50T65FD1PN , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 .