All IGBT. RJH60A83RDPP-M0 Datasheet

 

RJH60A83RDPP-M0 Datasheet and Replacement


   Type Designator: RJH60A83RDPP-M0
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 19 pF
   Package: TO220FL
 

 RJH60A83RDPP-M0 substitution

   - IGBT ⓘ Cross-Reference Search

 

RJH60A83RDPP-M0 Datasheet (PDF)

 0.1. Size:119K  renesas
rjh60a83rdpp-m0.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130

 3.1. Size:110K  renesas
rjh60a83rdpe.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130 ns

 7.1. Size:111K  renesas
rjh60a85rdpe.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160 ns

 7.2. Size:120K  renesas
rjh60a85rdpp-m0.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - RJH60A83RDPP-M0 transistor datasheet

 RJH60A83RDPP-M0 cross reference
 RJH60A83RDPP-M0 equivalent finder
 RJH60A83RDPP-M0 lookup
 RJH60A83RDPP-M0 substitution
 RJH60A83RDPP-M0 replacement

 

 
Back to Top

 


 
.