RJH60A83RDPP-M0 PDF and Equivalents Search

 

RJH60A83RDPP-M0 Specs and Replacement

Type Designator: RJH60A83RDPP-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Coesⓘ - Output Capacitance, typ: 19 pF

Package: TO220FL

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RJH60A83RDPP-M0 datasheet

 0.1. Size:119K  renesas
 rjh60a83rdpp-m0.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130 ... See More ⇒

 3.1. Size:110K  renesas
 rjh60a83rdpe.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130 ns ... See More ⇒

 7.1. Size:111K  renesas
 rjh60a85rdpe.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160 ns ... See More ⇒

 7.2. Size:120K  renesas
 rjh60a85rdpp-m0.pdf pdf_icon

RJH60A83RDPP-M0

Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160 ... See More ⇒

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Specs: AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , SGT50T65FD1PN , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 .

Keywords - RJH60A83RDPP-M0 transistor spec

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