RJH60V1BDPP-M0 Todos los transistores

Introduzca al menos 3 números o letras

RJH60V1BDPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60V1BDPP-M0

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.6

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 16

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 12

Capacitancia de salida (Cc), pF: 27

Empaquetado / Estuche: TO220FL

Búsqueda de reemplazo de RJH60V1BDPP-M0 - IGBT

 

RJH60V1BDPP-M0 Datasheet (PDF)

1.1. rjh60v1bdpe.pdf Size:106K _igbt

RJH60V1BDPP-M0
RJH60V1BDPP-M0

 Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200 600 V - 8 A - IGBT Rev.2.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

1.2. rjh60v1bdpp-m0.pdf Size:110K _igbt

RJH60V1BDPP-M0
RJH60V1BDPP-M0

 Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100 600V - 8A - IGBT Rev.1.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techn

4.1. rjh60v2bdpp-m0.pdf Size:100K _igbt

RJH60V1BDPP-M0
RJH60V1BDPP-M0

 Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

4.2. rjh60v3bdpp-m0.pdf Size:101K _igbt

RJH60V1BDPP-M0
RJH60V1BDPP-M0

 Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

4.3. rjh60v3bdpe.pdf Size:96K _igbt

RJH60V1BDPP-M0
RJH60V1BDPP-M0

 Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200 600V - 17A - IGBT Rev.2.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

4.4. rjh60v2bdpe.pdf Size:95K _igbt

RJH60V1BDPP-M0
RJH60V1BDPP-M0

 Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter Apr 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

Otros transistores... RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , IRG7R313U , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S .

 


RJH60V1BDPP-M0
  RJH60V1BDPP-M0
  RJH60V1BDPP-M0
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras