All IGBT. RJH60V1BDPP-M0 Datasheet

 

RJH60V1BDPP-M0 Datasheet and Replacement


   Type Designator: RJH60V1BDPP-M0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 27 pF
   Qg ⓘ - Total Gate Charge, typ: 19 nC
   Package: TO220FL
 

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RJH60V1BDPP-M0 Datasheet (PDF)

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 rjh60v1bdpp-m0.pdf pdf_icon

RJH60V1BDPP-M0

Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100600V - 8A - IGBT Rev.1.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techn

 4.1. Size:106K  renesas
 rjh60v1bdpe.pdf pdf_icon

RJH60V1BDPP-M0

Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200600 V - 8 A - IGBT Rev.2.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

 8.1. Size:100K  renesas
 rjh60v2bdpp-m0.pdf pdf_icon

RJH60V1BDPP-M0

Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

 8.2. Size:101K  renesas
 rjh60v3bdpp-m0.pdf pdf_icon

RJH60V1BDPP-M0

Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100600V - 17A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - RJH60V1BDPP-M0 transistor datasheet

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