RJH60V1BDPP-M0
IGBT. Datasheet pdf. Equivalent
Type Designator: RJH60V1BDPP-M0
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 30
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30
V
|Ic|ⓘ - Maximum Collector Current: 16
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.6
V @25℃
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 12
nS
Coesⓘ - Output Capacitance, typ: 27
pF
Qgⓘ -
Total Gate Charge, typ: 19
nC
Package:
TO220FL
RJH60V1BDPP-M0
Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJH60V1BDPP-M0
Datasheet (PDF)
..1. Size:110K renesas
rjh60v1bdpp-m0.pdf 
Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100600V - 8A - IGBT Rev.1.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techn
4.1. Size:106K renesas
rjh60v1bdpe.pdf
Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200600 V - 8 A - IGBT Rev.2.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno
8.1. Size:100K renesas
rjh60v2bdpp-m0.pdf
Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec
8.2. Size:101K renesas
rjh60v3bdpp-m0.pdf
Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100600V - 17A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec
8.3. Size:96K renesas
rjh60v3bdpe.pdf
Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200600V - 17A - IGBT Rev.2.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno
8.4. Size:95K renesas
rjh60v2bdpe.pdf
Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Apr 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno
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