STGF10H60DF Todos los transistores

 

STGF10H60DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGF10H60DF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 30 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 6.9 nS

Coesⓘ - Capacitancia de salida, typ: 60 pF

Encapsulados: TO220F

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STGF10H60DF datasheet

 ..1. Size:1722K  st
stgf10h60df.pdf pdf_icon

STGF10H60DF

STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 Safe paralleling D PAK Low thermal resistance TAB Short-circuit rated Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 Motor cont

 8.1. Size:1071K  st
stgf10nc60sd.pdf pdf_icon

STGF10H60DF

STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode 3 3 2 1 Application 1 Motor drive DPAK TO-220FP Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

 8.2. Size:607K  st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf pdf_icon

STGF10H60DF

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

 8.3. Size:605K  st
stgf10nc60kd.pdf pdf_icon

STGF10H60DF

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

Otros transistores... RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , FGH60N60SFD , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 .

 

 

 


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