All IGBT. STGF10H60DF Datasheet

 

STGF10H60DF Datasheet and Replacement


   Type Designator: STGF10H60DF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 6.9 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO220F
 

 STGF10H60DF substitution

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STGF10H60DF Datasheet (PDF)

 ..1. Size:1722K  st
stgf10h60df.pdf pdf_icon

STGF10H60DF

STGB10H60DF, STGF10H60DF, STGP10H60DFTrench gate field-stop IGBT, H series 600 V, 10 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont

 8.1. Size:1071K  st
stgf10nc60sd.pdf pdf_icon

STGF10H60DF

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

 8.2. Size:607K  st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf pdf_icon

STGF10H60DF

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 8.3. Size:605K  st
stgf10nc60kd.pdf pdf_icon

STGF10H60DF

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

Datasheet: RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , IKW75N60T , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 .

Keywords - STGF10H60DF transistor datasheet

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