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NGTB30N120L2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB30N120L2

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 534

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 35

Capacitancia de salida (Cc), pF: 200

Empaquetado / Estuche: TO247

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NGTB30N120L2 Datasheet (PDF)

1.1. ngtb30n120ihlwg.pdf Size:161K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.2. ngtb30n120l2wg.pdf Size:102K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast

1.3. ngtb30n120l.pdf Size:176K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.4. ngtb30n120ihrwg.pdf Size:180K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

1.5. ngtb30n120ihl.pdf Size:161K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.6. ngtb30n120l2.pdf Size:102K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast

1.7. ngtb30n120fl2wg.pdf Size:149K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http:/

1.8. ngtb30n120fl2.pdf Size:149K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http:/

1.9. ngtb30n120ihswg.pdf Size:172K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.10. ngtb30n120ihs.pdf Size:172K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.11. ngtb30n120lwg.pdf Size:176K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.12. ngtb30n120ihr.pdf Size:180K _igbt

NGTB30N120L2
NGTB30N120L2

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

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