All IGBT. NGTB30N120L2 Datasheet

 

NGTB30N120L2 Datasheet and Replacement


   Type Designator: NGTB30N120L2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 534 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB30N120L2 Datasheet (PDF)

 ..1. Size:102K  onsemi
 ngtb30n120l2.pdf pdf_icon

NGTB30N120L2

NGTB30N120L2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor motor driver applications. Incorporated into the device is a soft andfast

 0.1. Size:102K  onsemi
 ngtb30n120l2wg.pdf pdf_icon

NGTB30N120L2

NGTB30N120L2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor motor driver applications. Incorporated into the device is a soft andfast

 3.1. Size:176K  onsemi
 ngtb30n120lwg.pdf pdf_icon

NGTB30N120L2

NGTB30N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

 3.2. Size:176K  onsemi
 ngtb30n120l.pdf pdf_icon

NGTB30N120L2

NGTB30N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG300D120B6TC

Keywords - NGTB30N120L2 transistor datasheet

 NGTB30N120L2 cross reference
 NGTB30N120L2 equivalent finder
 NGTB30N120L2 lookup
 NGTB30N120L2 substitution
 NGTB30N120L2 replacement

 

 
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