NGTB30N120L2 - аналоги и описание IGBT

 

NGTB30N120L2 - Аналоги. Основные параметры


   Наименование: NGTB30N120L2
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 534 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 35 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB30N120L2

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры NGTB30N120L2

 ..1. Size:102K  onsemi
 ngtb30n120l2.pdf pdf_icon

NGTB30N120L2

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast

 0.1. Size:102K  onsemi
 ngtb30n120l2wg.pdf pdf_icon

NGTB30N120L2

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast

 3.1. Size:176K  onsemi
 ngtb30n120lwg.pdf pdf_icon

NGTB30N120L2

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device

 3.2. Size:176K  onsemi
 ngtb30n120l.pdf pdf_icon

NGTB30N120L2

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , IKW75N60T , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 .

History: CM15TF-12H

 

 
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