NGTB40N60L2WG Todos los transistores

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NGTB40N60L2WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB40N60L2WG

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 417

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 42

Capacitancia de salida (Cc), pF: 213

Empaquetado / Estuche: TO247

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NGTB40N60L2WG Datasheet (PDF)

1.1. ngtb40n60ihlwg.pdf Size:182K _igbt

NGTB40N60L2WG
NGTB40N60L2WG

NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pa

1.2. ngtb40n60l2.pdf Size:135K _igbt

NGTB40N60L2WG
NGTB40N60L2WG

NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 40 A, 600 V

1.3. ngtb40n60fl2.pdf Size:137K _igbt

NGTB40N60L2WG
NGTB40N60L2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http://

1.4. ngtb40n60l2wg.pdf Size:135K _igbt

NGTB40N60L2WG
NGTB40N60L2WG

NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 40 A, 600 V

1.5. ngtb40n60flwg.pdf Size:160K _igbt

NGTB40N60L2WG
NGTB40N60L2WG

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology 40 A, 600 V • Low Switching Loss R

1.6. ngtb40n60fl2wg.pdf Size:137K _igbt

NGTB40N60L2WG
NGTB40N60L2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http://

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