Справочник IGBT. NGTB40N60L2WG

 

NGTB40N60L2WG Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB40N60L2WG
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 42 nS
   Coesⓘ - Выходная емкость, типовая: 213 pF
   Qgⓘ - Общий заряд затвора, typ: 228 nC
   Тип корпуса: TO247
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NGTB40N60L2WG Datasheet (PDF)

 ..1. Size:135K  onsemi
 ngtb40n60l2wg.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60L2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C40 A, 600 V

 3.1. Size:135K  onsemi
 ngtb40n60l2.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60L2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C40 A, 600 V

 5.1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pa

 5.2. Size:137K  onsemi
 ngtb40n60fl2wg.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

ПОКАЗАТЬ ЕЩЁ

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History: MMG100J060U | DIM250PLM33-TL

 

 
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