NGTB40N60L2WG PDF and Equivalents Search

 

NGTB40N60L2WG Specs and Replacement

Type Designator: NGTB40N60L2WG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 213 pF

Package: TO247

 NGTB40N60L2WG Substitution

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NGTB40N60L2WG datasheet

 ..1. Size:135K  onsemi
 ngtb40n60l2wg.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 40 A, 600 V ... See More ⇒

 3.1. Size:135K  onsemi
 ngtb40n60l2.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 40 A, 600 V ... See More ⇒

 5.1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pa... See More ⇒

 5.2. Size:137K  onsemi
 ngtb40n60fl2wg.pdf pdf_icon

NGTB40N60L2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //... See More ⇒

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Specs: NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGD8201N , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 , NGTB50N60S1WG , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , TIG056BF-1E .

Keywords - NGTB40N60L2WG transistor spec

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