TIG056BF-1E Todos los transistores

 

TIG056BF-1E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIG056BF-1E
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 30 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 430 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 33 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 240 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 32 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO220F
 

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TIG056BF-1E Datasheet (PDF)

 ..1. Size:151K  onsemi
tig056bf-1e tig056bf.pdf pdf_icon

TIG056BF-1E

Ordering number : ENA1775BTIG056BFN-Channel IGBThttp://onsemi.com430V, 240A, VCE(sat); 3.6V TO-220F-3FSFeatures Low-saturation voltage Protection diode in Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector to Emitter Voltage VCES 430 VGate to Emitter Voltage VGES

 6.1. Size:324K  sanyo
tig056bf.pdf pdf_icon

TIG056BF-1E

TIG056BF Ordering number : ENA1775ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG056BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Volta

 9.1. Size:61K  1
tig052ts.pdf pdf_icon

TIG056BF-1E

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

 9.2. Size:61K  sanyo
tig052gs.pdf pdf_icon

TIG056BF-1E

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

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History: DDB6U75N16W1R | IGC142T120T8RL

 

 
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