TIG056BF-1E IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIG056BF-1E
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 30 W
|Vce|ⓘ - Tensión máxima colector-emisor: 430 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 33 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 240 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.6 V @25℃
trⓘ - Tiempo de subida, typ: 32 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Encapsulados: TO220F
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TIG056BF-1E datasheet
tig056bf-1e tig056bf.pdf
Ordering number ENA1775B TIG056BF N-Channel IGBT http //onsemi.com 430V, 240A, VCE(sat); 3.6V TO-220F-3FS Features Low-saturation voltage Protection diode in Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector to Emitter Voltage VCES 430 V Gate to Emitter Voltage VGES
tig056bf.pdf
TIG056BF Ordering number ENA1775A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG056BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Volta
tig052ts.pdf
Ordering number ENA1258 TIG052TS SANYO Semiconductors DATA SHEET N-Channel IGBT TIG052TS Light-Controlling Flash Applications Features Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=2
tig052gs.pdf
Ordering number ENA1258 TIG052TS SANYO Semiconductors DATA SHEET N-Channel IGBT TIG052TS Light-Controlling Flash Applications Features Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=2
Otros transistores... NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 , NGTB50N60S1WG , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , SGP30N60 , STGF30H60DF , IKA08N65F5 , IKA08N65H5 , IKA15N65F5 , IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 .
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