TIG056BF-1E Spec and Replacement, IGBT Equivalent Finder, Cross Reference

TIG056BF-1E Specs and Replacement

Type Designator: TIG056BF-1E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 33 V

|Ic| ⓘ - Maximum Collector Current: 240 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO220F

TIG056BF-1E Substitution

- IGBT ⓘ Cross-Reference Search

TIG056BF-1E datasheet

..1. Size:151K onsemi
tig056bf-1e tig056bf.pdf pdf_icon

Ordering number ENA1775B TIG056BF N-Channel IGBT http //onsemi.com 430V, 240A, VCE(sat); 3.6V TO-220F-3FS Features Low-saturation voltage Protection diode in Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector to Emitter Voltage VCES 430 V Gate to Emitter Voltage VGES ... See More ⇒

6.1. Size:324K sanyo
tig056bf.pdf pdf_icon

TIG056BF Ordering number ENA1775A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG056BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Volta... See More ⇒

9.1. Size:61K 1
tig052ts.pdf pdf_icon

Ordering number ENA1258 TIG052TS SANYO Semiconductors DATA SHEET N-Channel IGBT TIG052TS Light-Controlling Flash Applications Features Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=2... See More ⇒

9.2. Size:61K sanyo
tig052gs.pdf pdf_icon