RJP5001APP-M0 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJP5001APP-M0
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 45 W
|Vce|ⓘ - Tensión máxima colector-emisor: 500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 17 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.7 V @25℃
trⓘ - Tiempo de subida, typ: 430 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Encapsulados: TO220FL
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RJP5001APP-M0 datasheet
rjp5001app-m0.pdf
Preliminary Datasheet RJP5001APP-M0 R07DS0750EJ0100 Rev.1.00 Nch IGBT for Strobe Flash Apr 26, 2012 Features VCES 500 V TO-220FL package High Speed Switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) 2 1 Gate 2 Collector 1 3 Emitter 1 2 3 3 Applications Strobe flash Maximum Ratings (Tc = 25 C) Parameter Symbo
rjp5001app-00.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 , IRGR2B60KD , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , IKW40T120 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF .
History: AP50G60SW | SKM145GAL174DN | SGU20N40L | TGH40N60F2D | VS-ETL015Y120H | T0800EB45G | VS-100MT060WSP
History: AP50G60SW | SKM145GAL174DN | SGU20N40L | TGH40N60F2D | VS-ETL015Y120H | T0800EB45G | VS-100MT060WSP
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