RJP5001APP-M0 PDF and Equivalents Search

 

RJP5001APP-M0 Specs and Replacement

Type Designator: RJP5001APP-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 45 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 17 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃

tr ⓘ - Rise Time, typ: 430 nS

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO220FL

 RJP5001APP-M0 Substitution

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RJP5001APP-M0 datasheet

 ..1. Size:56K  renesas
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RJP5001APP-M0

Preliminary Datasheet RJP5001APP-M0 R07DS0750EJ0100 Rev.1.00 Nch IGBT for Strobe Flash Apr 26, 2012 Features VCES 500 V TO-220FL package High Speed Switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) 2 1 Gate 2 Collector 1 3 Emitter 1 2 3 3 Applications Strobe flash Maximum Ratings (Tc = 25 C) Parameter Symbo... See More ⇒

 3.1. Size:93K  renesas
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RJP5001APP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Specs: IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 , IRGR2B60KD , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , IKW40T120 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF .

History: T0900EB45A | SGP23N60UF | SII150N12 | TT030K065EQ | RJH60V2BDPP-M0 | SSM20G45EGH

Keywords - RJP5001APP-M0 transistor spec

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