RJP5001APP-00 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJP5001APP-00
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 45 W
|Vce|ⓘ - Tensión máxima colector-emisor: 500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 17 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 500 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO220F
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RJP5001APP-00 Datasheet (PDF)
rjp5001app-00.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjp5001app-m0.pdf
Preliminary Datasheet RJP5001APP-M0 R07DS0750EJ0100Rev.1.00Nch IGBT for Strobe Flash Apr 26, 2012Features VCES : 500 V TO-220FL package High Speed Switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)21 : Gate2 : Collector13 : Emitter1233Applications Strobe flash Maximum Ratings (Tc = 25C) Parameter Symbo
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