RJP5001APP-00 Specs and Replacement
Type Designator: RJP5001APP-00
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 45 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 17 V
|Ic| ⓘ - Maximum Collector Current: 300 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃
tr ⓘ - Rise Time, typ: 500 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO220F
RJP5001APP-00 Substitution - IGBT ⓘ Cross-Reference Search
RJP5001APP-00 datasheet
rjp5001app-00.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rjp5001app-m0.pdf
Preliminary Datasheet RJP5001APP-M0 R07DS0750EJ0100 Rev.1.00 Nch IGBT for Strobe Flash Apr 26, 2012 Features VCES 500 V TO-220FL package High Speed Switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) 2 1 Gate 2 Collector 1 3 Emitter 1 2 3 3 Applications Strobe flash Maximum Ratings (Tc = 25 C) Parameter Symbo... See More ⇒
Specs: RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 , IRGR2B60KD , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , RJP5001APP-M0 , IRG4PC50W , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF .
History: TGAN60N65F2DR
Keywords - RJP5001APP-00 transistor spec
RJP5001APP-00 cross reference
RJP5001APP-00 equivalent finder
RJP5001APP-00 lookup
RJP5001APP-00 substitution
RJP5001APP-00 replacement
History: TGAN60N65F2DR
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