STGFW20V60DF Todos los transistores

 

STGFW20V60DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGFW20V60DF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 52 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 10 nS

Coesⓘ - Capacitancia de salida, typ: 110 pF

Encapsulados: TO3PF

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STGFW20V60DF datasheet

 ..1. Size:1465K  st
stgfw20v60df.pdf pdf_icon

STGFW20V60DF

STGFW20V60DF Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Very high speed switching series Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 20 A 1 1 1 Tight parameters distribution 3 Safe paralleling 2 Low thermal resistance 1 Very fast so

 4.1. Size:1613K  st
stgfw20v60f.pdf pdf_icon

STGFW20V60DF

STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Very high speed switching series 3 Tail-less switching off 2 Low saturation voltage VCE(sat) = 1.8 V (typ.) 1 TO-3PF @ IC = 20 A TAB Tight parameters distribution Safe par

 7.1. Size:1497K  st
stgfw20h65fb.pdf pdf_icon

STGFW20V60DF

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 20 A TO-3P Tight parameters distribution 1 1 1 Safe paralleling 3 Low th

 9.1. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGFW20V60DF

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio

Otros transistores... RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , FGH30S130P , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F .

History: IXYN75N65C3D1

 

 

 

 

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