STGFW20V60DF PDF and Equivalents Search

 

STGFW20V60DF Specs and Replacement

Type Designator: STGFW20V60DF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 52 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 10 nS

Coesⓘ - Output Capacitance, typ: 110 pF

Package: TO3PF

 STGFW20V60DF Substitution

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STGFW20V60DF datasheet

 ..1. Size:1465K  st
stgfw20v60df.pdf pdf_icon

STGFW20V60DF

STGFW20V60DF Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Very high speed switching series Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 20 A 1 1 1 Tight parameters distribution 3 Safe paralleling 2 Low thermal resistance 1 Very fast so... See More ⇒

 4.1. Size:1613K  st
stgfw20v60f.pdf pdf_icon

STGFW20V60DF

STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Very high speed switching series 3 Tail-less switching off 2 Low saturation voltage VCE(sat) = 1.8 V (typ.) 1 TO-3PF @ IC = 20 A TAB Tight parameters distribution Safe par... See More ⇒

 7.1. Size:1497K  st
stgfw20h65fb.pdf pdf_icon

STGFW20V60DF

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 20 A TO-3P Tight parameters distribution 1 1 1 Safe paralleling 3 Low th... See More ⇒

 9.1. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGFW20V60DF

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio... See More ⇒

Specs: RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , FGH30S130P , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F .

History: ISL9V5045S3ST-F085 | HIA30N140IH-DA

Keywords - STGFW20V60DF transistor spec

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