IRGR4607D Todos los transistores

 

IRGR4607D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGR4607D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 58 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 11 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 20 pF
   Qgⓘ - Carga total de la puerta, typ: 9 nC
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

IRGR4607D Datasheet (PDF)

 ..1. Size:858K  international rectifier
 irgr4607d.pdf pdf_icon

IRGR4607D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CC C C IC = 7.0A, TC =100C E E E G C C tSC 5s, TJ(max) = 175C G G G EIRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive

 8.1. Size:428K  international rectifier
 irgr4610d.pdf pdf_icon

IRGR4607D

IRGR4610DPbFIRGS4610DPbFIRGB4610DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeC CVCES = 600VCCIC = 10A, TC = 100CEEECG GGGtsc > 5s, Tjmax = 175CD-PakE D2-Pak TO-220ABVCE(on) typ. = 1.7V @ 6A IRGR4610DPbFIRGS4610DPbF IRGB4610DPbFn-channelGCEApplicationsGate Collector Emitter Appliance Drives Inverters

 9.1. Size:453K  international rectifier
 auirgr4045d.pdf pdf_icon

IRGR4607D

PD - 97637AUTOMOTIVE GRADEAUIRGR4045DAUIRGU4045DINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT TechnologyIC = 6.0A, TC = 100C Low Switching Losses Maximum Junction temperature 175 C GVCE(on) typ. = 1.7V 5s SCSOA Square RBSOAE 100% of the parts tested for ILM n-channel

 9.2. Size:341K  international rectifier
 irgr4045d.pdf pdf_icon

IRGR4607D

IRGR4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODE VCES = 600VFeaturesIC 6.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesTjmax = 175C Maximum Junction temperature 175 C G 5s SCSOA Square RBSOAVCE(on) typ. 1.7VE 100% of the parts tested for ILM n-channel Positive VCE (on) Te

MOSTRAR MÁS

Otros transistores... KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , IKW40T120 , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F .

History: MPMB100B120RH

 

 
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