IRGR4607D - параметры транзистора, его аналоги, Даташиты

IRGR4607D Datasheet (PDF)

..1. Size:858K international rectifier
irgr4607d.pdf pdf_icon

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CC C C IC = 7.0A, TC =100C E E E G C C tSC 5s, TJ(max) = 175C G G G EIRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive

8.1. Size:428K international rectifier
irgr4610d.pdf pdf_icon

IRGR4610DPbFIRGS4610DPbFIRGB4610DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeC CVCES = 600VCCIC = 10A, TC = 100CEEECG GGGtsc > 5s, Tjmax = 175CD-PakE D2-Pak TO-220ABVCE(on) typ. = 1.7V @ 6A IRGR4610DPbFIRGS4610DPbF IRGB4610DPbFn-channelGCEApplicationsGate Collector Emitter Appliance Drives Inverters

9.1. Size:453K international rectifier
auirgr4045d.pdf pdf_icon

PD - 97637AUTOMOTIVE GRADEAUIRGR4045DAUIRGU4045DINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT TechnologyIC = 6.0A, TC = 100C Low Switching Losses Maximum Junction temperature 175 C GVCE(on) typ. = 1.7V 5s SCSOA Square RBSOAE 100% of the parts tested for ILM n-channel

9.2. Size:341K international rectifier
irgr4045d.pdf pdf_icon

IRGR4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODE VCES = 600VFeaturesIC 6.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesTjmax = 175C Maximum Junction temperature 175 C G 5s SCSOA Square RBSOAVCE(on) typ. 1.7VE 100% of the parts tested for ILM n-channel Positive VCE (on) Te

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .