IRGR4607D Specs and Replacement
Type Designator: IRGR4607D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 58 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 11 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 20 pF
Package: TO252
IRGR4607D Substitution
IRGR4607D datasheet
irgr4607d.pdf
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100 C E E E G C C tSC 5 s, TJ(max) = 175 C G G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive ... See More ⇒
irgr4610d.pdf
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100 C E E E C G G G G tsc > 5 s, Tjmax = 175 C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter Appliance Drives Inverters ... See More ⇒
irgr4045d.pdf
IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC 6.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses Tjmax = 175 C Maximum Junction temperature 175 C G 5 s SCSOA Square RBSOA VCE(on) typ. 1.7V E 100% of the parts tested for ILM n-channel Positive VCE (on) Te... See More ⇒
Specs: KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , MBQ40T65FDSC , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F .
Keywords - IRGR4607D transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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