All IGBT. IRGR4607D Datasheet

 

IRGR4607D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGR4607D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 58

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.75

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 11

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 20

Package: TO252

IRGR4607D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGR4607D Datasheet (PDF)

1.1. irgr4607d.pdf Size:858K _igbt

IRGR4607D
IRGR4607D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E E E G C C tSC 5µs, TJ(max) = 175°C G G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E • Industrial Motor Drive

4.1. irgr4610d.pdf Size:428K _igbt

IRGR4607D
IRGR4607D

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100°C E E E C G G G G tsc > 5µs, Tjmax = 175°C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter • Appliance Drives • Inverters •

5.1. irgr4045d.pdf Size:341K _igbt

IRGR4607D
IRGR4607D

IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC  6.0A, TC = 100°C  Low VCE (on) Trench IGBT Technology  Low Switching Losses Tjmax = 175°C  Maximum Junction temperature 175 °C G  5μs SCSOA  Square RBSOA VCE(on) typ.  1.7V E  100% of the parts tested for ILM n-channel  Positive VCE (on) Te

5.2. auirgr4045d.pdf Size:453K _igbt_a

IRGR4607D
IRGR4607D

PD - 97637 AUTOMOTIVE GRADE AUIRGR4045D AUIRGU4045D INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC = 6.0A, TC = 100°C • Low Switching Losses • Maximum Junction temperature 175 °C G VCE(on) typ. = 1.7V • 5µs SCSOA • Square RBSOA E • 100% of the parts tested for ILM n-channel

Datasheet: KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , GT20D101 , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F .

 


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