RJH60V2BDPE Todos los transistores

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RJH60V2BDPE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60V2BDPE

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 63

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.6

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 25

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 15

Capacitancia de salida (Cc), pF: 37

Empaquetado / Estuche: TO263

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RJH60V2BDPE Datasheet (PDF)

1.1. rjh60v2bdpp-m0.pdf Size:100K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

1.2. rjh60v2bdpe.pdf Size:95K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter Apr 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

4.1. rjh60v1bdpe.pdf Size:106K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200 600 V - 8 A - IGBT Rev.2.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

4.2. rjh60v3bdpp-m0.pdf Size:101K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

4.3. rjh60v3bdpe.pdf Size:96K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200 600V - 17A - IGBT Rev.2.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

4.4. rjh60v1bdpp-m0.pdf Size:110K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100 600V - 8A - IGBT Rev.1.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techn

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