All IGBT. RJH60V2BDPE Datasheet

 

RJH60V2BDPE IGBT. Datasheet pdf. Equivalent

Type Designator: RJH60V2BDPE

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 63

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 37

Package: TO263

RJH60V2BDPE Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60V2BDPE Datasheet (PDF)

1.1. rjh60v2bdpp-m0.pdf Size:100K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

1.2. rjh60v2bdpe.pdf Size:95K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter Apr 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

4.1. rjh60v1bdpe.pdf Size:106K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200 600 V - 8 A - IGBT Rev.2.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

4.2. rjh60v3bdpp-m0.pdf Size:101K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

4.3. rjh60v3bdpe.pdf Size:96K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200 600V - 17A - IGBT Rev.2.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

4.4. rjh60v1bdpp-m0.pdf Size:110K _igbt

RJH60V2BDPE
RJH60V2BDPE

 Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100 600V - 8A - IGBT Rev.1.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techn

Datasheet: STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , STGFW40V60DF , RJP63K2DPK-M0 , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D , IRGS4045D .

 


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