OM6526SA Todos los transistores

 

OM6526SA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OM6526SA

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85

Tensión colector-emisor (Vce): 1000

Voltaje de saturación colector-emisor (Vce sat): 4

Corriente del colector DC máxima (Ic): 15

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 200

Capacitancia de salida (Cc), pF: 100

Empaquetado / Estuche: TO254AA

Búsqueda de reemplazo de OM6526SA - IGBT

 

OM6526SA Datasheet (PDF)

0.1. om6526sa.pdf Size:18K _omnirel

OM6526SA
OM6526SA

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev

9.1. om6529ss.pdf Size:21K _omnirel

OM6526SA
OM6526SA

OM6529SSOM6530SSINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Availa

9.2. om6527sc.pdf Size:21K _omnirel

OM6526SA
OM6526SA

OM6527SCOM6528SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Available Screened

 9.3. om6520sc.pdf Size:17K _omnirel

OM6526SA
OM6526SA

OM6516SCOM6520SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened

9.4. om6524st.pdf Size:23K _omnirel

OM6526SA
OM6526SA

OM6524STOM6525SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC PACKAGE1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-1

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top

 


OM6526SA
  OM6526SA
  OM6526SA
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C | MMGT25H120XB6C | MMGT200Q120B6C

 

 

 
Back to Top