OM6526SA Todos los transistores

 

OM6526SA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OM6526SA
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 85 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 200 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO254AA
     - Selección de transistores por parámetros

 

OM6526SA Datasheet (PDF)

 ..1. Size:18K  omnirel
 om6526sa.pdf pdf_icon

OM6526SA

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev

 9.1. Size:17K  omnirel
 om6520sc.pdf pdf_icon

OM6526SA

OM6516SCOM6520SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened

 9.2. Size:23K  omnirel
 om6524st.pdf pdf_icon

OM6526SA

OM6524STOM6525SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC PACKAGE1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-1

 9.3. Size:21K  omnirel
 om6529ss.pdf pdf_icon

OM6526SA

OM6529SSOM6530SSINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Availa

MOSTRAR MÁS

Otros transistores... IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D , IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , IKW40N65WR5 , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , IRG8P08N120KD , IRGB4615D , IRGS4615D , RJH3077 , RJP63G4 .

History: JT050N120GPED | IXSN35N120AU1 | SRE160N065FSUD8 | IXGH28N90B | IRG4BC30F | MMIX2S50N60B4D1

 

 
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