Справочник IGBT. OM6526SA

 

OM6526SA - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: OM6526SA

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 85

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1000

Напряжение насыщения коллектор-эмиттер (Ucesat): 4

Максимальный постоянный ток коллектора (Ic): 15

Максимальная температура перехода (Tj): 150

Время нарастания: 200

Емкость коллектора (Cc), pf: 100

Корпус: TO254AA

Аналог (замена) для OM6526SA  

 

 

OM6526SA Datasheet (PDF)

1.1. om6526sa.pdf Size:18K _igbt

OM6526SA
OM6526SA

OM6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated IGBTs In A Hermetic Package • High Input Impedance • Low On-Voltage • High Current Capability • High Switching Speed • Low Tail Current • Available Screened To MIL-S-19500, TX, TXV and S Lev

5.1. om6524st.pdf Size:23K _omnirel

OM6526SA
OM6526SA

OM6524ST OM6525SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-19500, TX, TXV And S

5.2. om6527sc.pdf Size:21K _omnirel

OM6526SA
OM6526SA

OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Available Screened To MIL-S-19500, TX

 5.3. om6529ss.pdf Size:21K _omnirel

OM6526SA
OM6526SA

OM6529SS OM6530SS INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Available Screened To MIL

5.4. om6520sc.pdf Size:17K _igbt

OM6526SA
OM6526SA

OM6516SC OM6520SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated IGBTs In A Hermetic Package • High Input Impedance • Low On-Voltage • High Current Capability • High Switching Speed • Low Tail Current • Available With Free Wheeling Diode • Available Screened

Другие IGBT... IRG4MC30F , IRGB4610D , IRGR4045D , IRGR4610D , IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , HGTG20N60A4 , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , IRG8P08N120KD , IRGB4615D , IRGS4615D , 2E715A , 2E715B .

 

 

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 

 

 

 
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