OM6526SA Datasheet. Specs and Replacement

Type Designator: OM6526SA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 85 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO254AA

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OM6526SA datasheet

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OM6526SA

OM6524ST OM6525SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-1... See More ⇒

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OM6529SS OM6530SS INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Availa... See More ⇒

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Specs: IRG4MC30F, IRGB4610D, IRGR4045D, IRGR4610D, IRGS4045D, IRGS4610D, STGFW80V60F, IXA12IF1200PC, NCE60TD60BT, STGB7H60DF, STGP7H60DF, IRG8B08N120KD, IRG8P08N120KD, IRGB4615D, IRGS4615D, RJH3077, RJP63G4

Keywords - OM6526SA transistor spec

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