STGD3NC120H Todos los transistores

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STGD3NC120H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGD3NC120H

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 105

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 7

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 3.5

Capacitancia de salida (Cc), pF: 45

Empaquetado / Estuche: TO251

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STGD3NC120H Datasheet (PDF)

1.1. stgd3nc120h.pdf Size:895K _igbt

STGD3NC120H
STGD3NC120H

STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet - production data Features ■ High voltage capability ■ High speed TAB Applications 3 ■ Home appliance 2 1 ■ Lighting IPAK Description (TO251) This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state

4.1. stgp3nb60s-stgd3nb60s.pdf Size:411K _st

STGD3NC120H
STGD3NC120H

STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STGP3NB60S 600 V <1.5 V 3 A STGD3NB60S 600 V <1.5 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 VERY LOW ON-VOLTAGE DROP (Vcesat) 1 3 OFF LOSSES INCLUDE TAIL CURRENT 2 1 ADD SUFFIX T4 FOR ORDERING IN TAPE & DPAK REEL (SMD VERSION) TO-220 DESCRIPTION Using the latest high voltag

4.2. stgd3nb60h.pdf Size:313K _st

STGD3NC120H
STGD3NC120H

STGD3NB60H N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STD3NB60H 600 V < 2.8 V 3 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) 3 OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE 1 HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION DPAK CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family ANTIPA

4.3. stgd3nb60sd.pdf Size:308K _st

STGD3NC120H
STGD3NC120H

STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STGD3NB60SD 600 V < 1.5 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 VERY LOW ON-VOLTAGE DROP (Vcesat) 1 HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE DPAK OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based on INTERNAL SCHEMATIC DIAGRAM a patented strip la

4.4. stgd3nb60sd.pdf Size:308K _igbt

STGD3NC120H
STGD3NC120H

STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGD3NB60SD 600 V < 1.5 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 VERY LOW ON-VOLTAGE DROP (Vcesat) 1 HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE DPAK OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based on INTERNAL SCHEMATIC DIAGRAM a patented str

Otros transistores... IKD06N60RA , IRGB4715D , IRGS4715D , IRGS4064D , MG1215H-XBN2MM , IKP15N65F5 , IKP15N65H5 , MMG15H120XB6TN , RJP30H1DPP-M0 , RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G .

 


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