Справочник IGBT. STGD3NC120H

 

STGD3NC120H - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: STGD3NC120H

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 105

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.2

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 7

Максимальная температура перехода (Tj): 150

Время нарастания: 3.5

Емкость коллектора (Cc), pf: 45

Корпус: TO251

Аналог (замена) для STGD3NC120H

 

 

STGD3NC120H Datasheet (PDF)

1.1. stgd3nc120h.pdf Size:895K _igbt

STGD3NC120H
STGD3NC120H

STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet - production data Features ■ High voltage capability ■ High speed TAB Applications 3 ■ Home appliance 2 1 ■ Lighting IPAK Description (TO251) This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state

4.1. stgp3nb60s-stgd3nb60s.pdf Size:411K _st

STGD3NC120H
STGD3NC120H

STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STGP3NB60S 600 V <1.5 V 3 A STGD3NB60S 600 V <1.5 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 VERY LOW ON-VOLTAGE DROP (Vcesat) 1 3 OFF LOSSES INCLUDE TAIL CURRENT 2 1 ADD SUFFIX T4 FOR ORDERING IN TAPE & DPAK REEL (SMD VERSION) TO-220 DESCRIPTION Using the latest high voltag

4.2. stgd3nb60h.pdf Size:313K _st

STGD3NC120H
STGD3NC120H

STGD3NB60H N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STD3NB60H 600 V < 2.8 V 3 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) 3 OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE 1 HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION DPAK CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family ANTIPA

 4.3. stgd3nb60sd.pdf Size:308K _st

STGD3NC120H
STGD3NC120H

STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STGD3NB60SD 600 V < 1.5 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 VERY LOW ON-VOLTAGE DROP (Vcesat) 1 HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE DPAK OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based on INTERNAL SCHEMATIC DIAGRAM a patented strip la

4.4. stgd3nb60sd.pdf Size:308K _igbt

STGD3NC120H
STGD3NC120H

STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGD3NB60SD 600 V < 1.5 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 VERY LOW ON-VOLTAGE DROP (Vcesat) 1 HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE DPAK OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based on INTERNAL SCHEMATIC DIAGRAM a patented str

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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