STGD3NC120H IGBT. Datasheet pdf. Equivalent

   Type Designator: STGD3NC120H
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 105 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 7 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 3.5 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Qgⓘ - Total Gate Charge, typ: 24 nC
   Package: TO251

STGD3NC120H Transistor Equivalent Substitute - IGBT Cross-Reference Search

STGD3NC120H Datasheet (PDF)

..1. Size:895K st
stgd3nc120h.pdf

STGD3NC120H7 A, 1200 V very fast IGBTDatasheet - production dataFeatures High voltage capability High speedTABApplications3 Home appliance21 LightingIPAKDescription(TO251)This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state

8.1. Size:308K st
stgd3nb60sd.pdf