STGD3NC120H Datasheet and Replacement
Type Designator: STGD3NC120H
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 105 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 3.5 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Package: TO251
- IGBT Cross-Reference
STGD3NC120H Datasheet (PDF)
stgd3nc120h.pdf
STGD3NC120H7 A, 1200 V very fast IGBTDatasheet - production dataFeatures High voltage capability High speedTABApplications3 Home appliance21 LightingIPAKDescription(TO251)This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state
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STGD3NB60SDN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGD3NB60SD 600 V
stgd3nb60h.pdf
STGD3NB60HN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTD3NB60H 600 V
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STGP3NB60SSTGD3NB60SN-CHANNEL 3A - 600V - TO-220 / DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGP3NB60S 600 V
Datasheet: IKD06N60RA , IRGB4715D , IRGS4715D , IRGS4064D , MG1215H-XBN2MM , IKP15N65F5 , IKP15N65H5 , MMG15H120XB6TN , RJP30H1DPD , RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G .
History: APTGT200A170D3 | IKP20N65H5 | NCE75ED120VTP | MMGT15H120XB6C | BSM50GD170DL | 2N6977 | KE703A
Keywords - STGD3NC120H transistor datasheet
STGD3NC120H cross reference
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History: APTGT200A170D3 | IKP20N65H5 | NCE75ED120VTP | MMGT15H120XB6C | BSM50GD170DL | 2N6977 | KE703A
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