RJH60V3BDPE Todos los transistores

 ..1. Size:96K  renesas
 rjh60v3bdpe.pdf

Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200 600V - 17A - IGBT Rev.2.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

 4.1. Size:101K  renesas
 rjh60v3bdpp-m0.pdf

Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

 8.1. Size:100K  renesas
 rjh60v2bdpp-m0.pdf

Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

 8.2. Size:95K  renesas
 rjh60v2bdpe.pdf

Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter Apr 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

 8.3. Size:106K  renesas
 rjh60v1bdpe.pdf

Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200 600 V - 8 A - IGBT Rev.2.00 Application Inverter May 25, 2011 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

 8.4. Size:110K  renesas
 rjh60v1bdpp-m0.pdf

Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100 600V - 8A - IGBT Rev.1.00 Application Inverter May 25, 2011 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techn