RJH60V3BDPE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJH60V3BDPE Datasheet (PDF)

..1. Size:96K renesas
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Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200600V - 17A - IGBT Rev.2.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

4.1. Size:101K renesas
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Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100600V - 17A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

8.1. Size:100K renesas
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Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

8.2. Size:95K renesas
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Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Apr 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno