All IGBT. RJH60V3BDPE Datasheet

 

RJH60V3BDPE IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60V3BDPE
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 113 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qgⓘ - Total Gate Charge, typ: 60 nC
   Package: TO263

 RJH60V3BDPE Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60V3BDPE Datasheet (PDF)

 ..1. Size:96K  renesas
 rjh60v3bdpe.pdf

RJH60V3BDPE RJH60V3BDPE

Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200600V - 17A - IGBT Rev.2.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

 4.1. Size:101K  renesas
 rjh60v3bdpp-m0.pdf

RJH60V3BDPE RJH60V3BDPE

Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100600V - 17A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

 8.1. Size:100K  renesas
 rjh60v2bdpp-m0.pdf

RJH60V3BDPE RJH60V3BDPE

Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec

 8.2. Size:95K  renesas
 rjh60v2bdpe.pdf

RJH60V3BDPE RJH60V3BDPE

Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Apr 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

 8.3. Size:106K  renesas
 rjh60v1bdpe.pdf

RJH60V3BDPE RJH60V3BDPE

Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200600 V - 8 A - IGBT Rev.2.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno

 8.4. Size:110K  renesas
 rjh60v1bdpp-m0.pdf

RJH60V3BDPE RJH60V3BDPE

Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100600V - 8A - IGBT Rev.1.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techn

Datasheet: IRGS4064D , MG1215H-XBN2MM , IKP15N65F5 , IKP15N65H5 , MMG15H120XB6TN , STGD3NC120H , RJP6016JPE , RJH60A85RDPE , RJP63F3DPP-M0 , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF .

 

 
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