RJH60V3BDPE Datasheet. Specs and Replacement

Type Designator: RJH60V3BDPE  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 113 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: TO263

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RJH60V3BDPE datasheet

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RJH60V3BDPE

Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200 600V - 17A - IGBT Rev.2.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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 rjh60v3bdpp-m0.pdf pdf_icon

RJH60V3BDPE

Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

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 rjh60v2bdpp-m0.pdf pdf_icon

RJH60V3BDPE

Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

 8.2. Size:95K  renesas
 rjh60v2bdpe.pdf pdf_icon

RJH60V3BDPE

Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter Apr 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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Specs: IRGS4064D, MG1215H-XBN2MM, IKP15N65F5, IKP15N65H5, MMG15H120XB6TN, STGD3NC120H, RJP6016JPE, RJH60A85RDPE, RJP30H1DPD, IRG7PH28UD1, NGD18N45, NGD18N45CLBT4G, NGD8201B, NGD8201BNT4G, STGB10H60DF, STGB15H60DF, STGP10H60DF

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