HGTD2N120BNS Todos los transistores

 

HGTD2N120BNS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTD2N120BNS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 104 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Paquete / Cubierta: TO252
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HGTD2N120BNS Datasheet (PDF)

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HGTD2N120BNS

HGTP2N120BN, HGTD2N120BNS,HGT1S2N120BNSData Sheet January 2000 File Number 4696.212A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oCHGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at

 5.1. Size:89K  1
 hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf pdf_icon

HGTD2N120BNS

HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

Otros transistores... HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , GT45F122 , HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 .

History: MMG100SR120UK | FF200R12KE4 | APTGT200SK120D3 | SKM400GA124D | 6MBI100VW-060-50 | 6MBP25VBA120-50 | AUIRG4BC30S-S

 

 
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