HGTD2N120BNS Datasheet. Specs and Replacement

Type Designator: HGTD2N120BNS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 104 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃

tr ⓘ - Rise Time, typ: 11 nS

Package: TO252

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HGTD2N120BNS datasheet

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HGTD2N120BNS

HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oC HGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at ... See More ⇒

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HGTD2N120BNS

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oC HGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at ... See More ⇒

Specs: HGTD10N40F1, HGTD10N40F1S, HGTD10N40F1S9A, HGTD10N50F1, HGTD10N50F1S, HGTD10N50F1S9A, HGTD1N120BNS, HGTD1N120CNS, IRG7R313U, HGTD2N120CNS, HGTD3N60A4S, HGTD3N60B3, HGTD3N60B3S, HGTD3N60C3, HGTD3N60C3S, HGT5A27N120BN, HGTD6N40E1

Keywords - HGTD2N120BNS transistor spec

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