HGTD2N120CNS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTD2N120CNS
Tipo de transistor: IGBT
Código de marcado: 2N120C
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 104 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.7(typ) V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Qgⓘ - Carga total de la puerta, typ: 30 nC
Paquete / Cubierta: TO252
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HGTD2N120CNS Datasheet (PDF)
hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf
HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at
hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf
HGTP2N120BN, HGTD2N120BNS,HGT1S2N120BNSData Sheet January 2000 File Number 4696.212A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oCHGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at
Otros transistores... HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , FGH60N60SFD , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S .
History: VBGT25N135 | IXGH28N60B
History: VBGT25N135 | IXGH28N60B
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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