HGTD2N120CNS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTD2N120CNS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 104 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Encapsulados: TO252

  📄📄 Copiar 

 Búsqueda de reemplazo de HGTD2N120CNS IGBT

- Selecciónⓘ de transistores por parámetros

 

HGTD2N120CNS datasheet

 ..1. Size:89K  1
 hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf pdf_icon

HGTD2N120CNS

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oC HGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

 5.1. Size:85K  1
 hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf pdf_icon

HGTD2N120CNS

HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oC HGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at

Otros transistores... HGTD10N40F1S, HGTD10N40F1S9A, HGTD10N50F1, HGTD10N50F1S, HGTD10N50F1S9A, HGTD1N120BNS, HGTD1N120CNS, HGTD2N120BNS, IRG7R313U, HGTD3N60A4S, HGTD3N60B3, HGTD3N60B3S, HGTD3N60C3, HGTD3N60C3S, HGT5A27N120BN, HGTD6N40E1, HGTD6N40E1S