All IGBT. HGTD2N120CNS Datasheet

 

HGTD2N120CNS Datasheet and Replacement


   Type Designator: HGTD2N120CNS
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 104 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 13 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 11 nS
   Package: TO252
      - IGBT Cross-Reference

 

HGTD2N120CNS Datasheet (PDF)

 ..1. Size:89K  1
 hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf pdf_icon

HGTD2N120CNS

HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

 5.1. Size:85K  1
 hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf pdf_icon

HGTD2N120CNS

HGTP2N120BN, HGTD2N120BNS,HGT1S2N120BNSData Sheet January 2000 File Number 4696.212A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oCHGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at

Datasheet: HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , IRG7R313U , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S .

History: MMG300D120B6UC | AOTF5B65M2

Keywords - HGTD2N120CNS transistor datasheet

 HGTD2N120CNS cross reference
 HGTD2N120CNS equivalent finder
 HGTD2N120CNS lookup
 HGTD2N120CNS substitution
 HGTD2N120CNS replacement

 

 
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